Simulation of Silicon Oxycarbide Waveguides for Shorter Band Photonics

Yusra Daudpota; Faisal Ahmed Memon; Aftab Ahmed Memon; Bhawani Shankar Chowdhry

doi:10.33317/ssurj.486

Authors

Yusra Daudpota Mehran University of Engineering & Technology, Jamshoro
Faisal Ahmed Memon Mehran University of Engineering & Technology, Jamshoro
Aftab Ahmed Memon Mehran University of Engineering & Technology, Jamshoro
Bhawani Shankar Chowdhry Mehran University of Engineering & Technology, Jamshoro

DOI:

https://doi.org/10.33317/ssurj.486

Keywords:

integrated photonics, silicon oxycarbides, optics, bending radius, directional coupler

Abstract

In this research paper, we design and simulate Silicon Oxycarbide (SiOC) channel waveguides and photonic passive device such as directional coupler. SiOC channel waveguides are designed for different values of width and height at shorter wavelength band that is 1310 nm wavelength window with refractive index of SiOC (ncore) =2.2 μm and SiO2 (nclad) = 1.444 μm. TE and TM fundamental mode is achieved at width = 1.5 microns and height = 0.5 microns to understand the single mode operation of SiOC channel waveguides. The minimum bending radius of SiOC waveguide is found to be 30 microns that is large enough to integrate the large scale devices. Directional coupler is designed to measure the coupling power between waveguides with gap 0.6, 0.7 and 0.8 microns that gives the 3dB coupling at 20, 40 and 100 microns. In this research, silicon oxycarbide is presented as potential material platform for the highly efficient photonic devices.

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